Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type iv semiconductor elements

ABSTRACT

A method of forming a contact to a semiconductor device is provided that forms an alloy composed of nickel (Ni), platinum (Pt), aluminum (Al), titanium (Ti) and a semiconductor material. The methods may include forming a nickel and platinum semiconductor alloy at a base of a via. A titanium layer having an angstrom scale thickness is deposited in the via in contact with the nickel platinum semiconductor alloy. An aluminum containing fill is deposited atop the titanium layer. A forming gas anneal including an oxygen containing atmosphere is applied to the structure to provide a contact alloy comprising nickel, platinum, aluminum, titanium and a semiconductor element from the contact surface of the semiconductor device.

BACKGROUND Technical Field

The methods and structures described herein relate to contact structuresand structures for transmitting electrical current.

Description of the Related Art

Modern integrated circuits are made up of literally millions of activedevices such as transistors and capacitors. These devices are initiallyisolated from one another but are later interconnected together toformed functional circuits. The quality of the interconnection structuredrastically affects the performance and reliability of the fabricatedcircuit. Interconnects and contacts are typically formed to bring andtransmit electrical signals to semiconductor devices.

SUMMARY

In one embodiment, a method of forming a contact to a semiconductordevice is provided that forms an alloy composed of nickel (Ni), platinum(Pt), aluminum (Al), titanium (Ti) and a semiconductor material, such assilicon (Si). In one embodiment, the methods includes forming a nickeland platinum semiconductor alloy at a base of a via open atop a contactsurface to a semiconductor device. A titanium layer having an angstromscale thickness is conformally deposited in the via opening in contactwith the nickel platinum semiconductor alloy. An aluminum containingfill is deposited atop the titanium layer. In a following step, ananneal is applied to the material stack to provide a contact alloycomprising nickel, platinum, aluminum, titanium and a semiconductorelement from the contact surface of the semiconductor device.

In another embodiment, the method of forming a contact to asemiconductor device can include further include a metal nitride layerthat is formed within the via opening and a second metal fill atop themetal nitride layer. In one embodiment, the method includes forming anickel platinum semiconductor alloy at a base of a via opening atop acontact surface of a semiconductor device. A titanium layer having anangstrom scale thickness can be conformally deposited in the via openingin contact with the nickel platinum semiconductor alloy. An aluminumcontaining fill is deposited atop the titanium layer in a lower portionof the via opening. A metal nitride layer and metal containing contactis deposited to substantially fill the via opening. In a following step,an anneal is applied to the material stack to provide a contact alloycomprising nickel, platinum, aluminum, titanium and a semiconductorelement from the contact surface of the semiconductor device.

In another aspect, a contact to a semiconductor device is provided. Inone embodiment, the contact to the semiconductor device is to thecontact surface of at least one of a source region and drain region of asemiconductor device. A nickel, platinum, aluminum and titaniumincluding intermetallic contact region is alloyed with the source/drainregion contact semiconductor surface. A via contact is in contact withthe intermetallic contact region, wherein the via contact includes aconformal titanium layer present on the intermetallic contact and ametal containing fill present on the conformal titanium layer.

BRIEF DESCRIPTION OF DRAWINGS

The following description will provide details for some embodiments forthe methods and structures provided herein with reference to thefollowing figures wherein:

FIG. 1 is a side cross-sectional view depicting a via opening through adielectric layer to the contact surface of a source/drain region.

FIG. 2 is a side cross-sectional view depicting forming a nickel andplatinum containing alloy with a semiconductor element at a base of thevia opening.

FIG. 3 is a side cross-sectional view depicting depositing a titaniumlayer having an angstrom scale thickness within the via opening incontact with the nickel platinum semiconductor alloy, wherein analuminum fill is deposited atop the titanium layer.

FIG. 4 is a side cross-sectional view depicting applying an anneal tothe material stack depicted in FIG. 3 to provide a contact alloycomposed of nickel, platinum, aluminum, titanium and a semiconductorelement from the contact surface of the semiconductor device.

FIG. 5 is a side cross-sectional view depicting another embodiment ofthe present disclosure in which an aluminum fill is deposited atop thetitanium layer in a lower portion of the via as depicted in FIG. 2, anda metal nitride layer and metal containing contact is deposited tosubstantially fill the via opening.

FIG. 6 is a side cross-sectional view depicting applying an anneal tothe material stack depicted in FIG. 5 to provide a contact alloycomprising nickel, platinum, aluminum, titanium and a semiconductorelement from the contact surface of the semiconductor device.

FIG. 7 is a side cross-sectional view of a field effect transistor (FET)including a contact to the source/drain regions of the semiconductordevice including a nickel, platinum, aluminum and titanium includingintermetallic contact region that is alloyed with the source/drainregion contact semiconductor surface.

FIG. 8 is a side cross-sectional view of a field effect transistor (FET)including a contact formed in accordance with method described withreference to FIGS. 1-2 and 5-6.

FIG. 9 is a side cross-sectional view of a fin type field effecttransistor (FinFET) including a nickel, platinum, aluminum and titaniumincluding intermetallic contact region that is alloyed with thesource/drain region contact semiconductor surface.

FIG. 10 is a side cross-sectional view of a fin type field effecttransistor (FinFET) including a contact formed in accordance with methoddescribed with reference to FIGS. 1-2 and 5-6.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Detailed embodiments of the claimed structures and methods are describedherein; however, it is to be understood that the described embodimentsare merely illustrative of the claimed structures and methods that maybe embodied in various forms. In addition, each of the examples given inconnection with the various embodiments are intended to be illustrative,and not restrictive. Further, the figures are not necessarily to scale,some features may be exaggerated to show details of particularcomponents. Therefore, specific structural and functional detailsdescribed herein are not to be interpreted as limiting, but merely as arepresentative basis for teaching one skilled in the art to variouslyemploy the methods and structures of the present description. Forpurposes of the description hereinafter, the terms “upper”, “lower”,“right”, “left”, “vertical”, “horizontal”, “top”, “bottom”, andderivatives thereof shall relate to the embodiments of the describedmethods and structures, as it is oriented in the drawing figures. Theterms “present on” means that a first element, such as a firststructure, is present on a second element, such as a second structure,wherein intervening elements, such as an interface structure, e.g.interface layer, may be present between the first element and the secondelement. The term “direct contact” means that a first element, such as afirst structure, and a second element, such as a second structure, areconnected without any intermediary conducting, insulating orsemiconductor layers at the interface of the two elements.

With increasing scaling for next generation complementary metal oxidesemiconductor (CMOS) devices, the middle of the line (MOL) resistancecan affect device performance. It has been determined that in order toovercome the MOL high resistance issues, that in some embodiments, thehigh-resistance interface between the contact to the source and drainregions (CA) contact, and the trench silicon (TS) contact can play acritical role.

In some embodiments, the methods and structures that are describedherein provide a novel method to form a lower-resistance contact to thesource and drain regions by forming contact region on the source anddrain regions of the semiconductor device comprising nickel, platinum,aluminum, titanium and a semiconductor element from the contact surfaceof the source/drain region of the semiconductor device. Some embodimentsof the methods and structures provided herein, are now described in moredetail with reference to FIGS. 1-10.

FIG. 1 depicts one embodiment of a via opening 15 through a dielectriclayer 10 to the contact surface 5 of a semiconductor device. As usedherein, the term “semiconductor device” refers to an intrinsicsemiconductor material that has been doped, that is, into which a dopingagent has been introduced, giving it different electrical propertiesthan the intrinsic semiconductor. Doping involves adding dopant atoms toan intrinsic semiconductor, which changes the electron and hole carrierconcentrations of the intrinsic semiconductor at thermal equilibrium.Dominant carrier concentration in an extrinsic semiconductor determinesthe conductivity type of the semiconductor. The methods and structuresare suitable to many types of semiconductor devices, such as planarsemiconductor devices, e.g., field effect transistors (FETs); fin typefield effect transistors (FinFETs); bipolar junction transistors andother related types of semiconductor devices. In some embodiments, thecontact surfaces 5 that the contacts that are described herein are inelectrical communication with can be the source/drain regions of asemiconductor device, or a gate region of a semiconductor device.

The contact surfaces 5 of the semiconductor devices are typicallycomposed of a semiconductor material. For example, the contact surfaces5 may be composed of a type IV semiconductor material. By “type IVsemiconductor” it is meant that the semiconductor material includes atleast one element from Group IVA (i.e., Group 14) of the Periodic Tableof Elements. Examples of type IV semiconductor materials that aresuitable for the fin structure include silicon (Si), germanium (Ge),silicon germanium (SiGe), silicon doped with carbon (Si:C), silicongermanium doped with carbon (SiGe:C) and a combination thereof. In someexamples, the contact surfaces 5 may be source/drain regions composed ofsilicon (Si) or silicon germanium (SiGe). In the instances in which thecontact surfaces 5 are the source/drain regions of a semiconductordevice, the base semiconductor material of the contact surfaces 5 can bedoped with an n-type or p-type conductivity dopant, i.e., depending onthe conductivity type of the semiconductor device, e.g., if thesemiconductor device is an n-type or p-type field effect transistor(FET).

The dielectric layer 10 that is present atop the contact surface 5 thatthe via opening 15 is formed through may be blanket deposited atop theentirety of the semiconductor device that includes the contact surface5. The dielectric layer 10 may be an oxide, nitride or oxynitridematerial. In some instances, the dielectric layer 10 may be referred toas interlevel dielectric or an intralevel dielectric. In someembodiments, the dielectric layer 10 is be selected from the groupconsisting of silicon containing materials, such as SiO₂, Si₃N₄,SiO_(x)N_(y), SiC, SiCO, SiCOH, and SiCH compounds, the above-mentionedsilicon containing materials with some or all of the Si replaced by Ge,carbon doped oxides, inorganic oxides, inorganic polymers, hybridpolymers, organic polymers such as polyamides or SiLK™, other carboncontaining materials, organo-inorganic materials such as spin-on glassesand silsesquioxane-based materials, and diamond-like carbon (DLC), alsoknown as amorphous hydrogenated carbon, α-C:H). The dielectric layer 10may be deposited using chemical vapor deposition (CVD) or spin ondeposition. Following deposition, the upper surface of the dielectriclayer 10 can be planarized, using a planarization process, such aschemical mechanical planarization (CMP).

Still referring to FIG. 1, via openings 15 can be formed through thedielectric layer 10 to expose the contact surfaces 5 of thesemiconductor devices, e.g., contact surfaces of the source and drainregion portions of the semiconductor devices. The via openings 15 may beformed using photolithography and etch processes. Specifically, and inone example, a etch mask pattern is produced by applying a photoresistto the surface to be etched, exposing the photoresist to a pattern ofradiation, and then developing the pattern into the photoresistutilizing a resist developer. Once the patterning of the photoresist iscompleted, the sections of the dielectric layer 10 covered by thephotoresist are protected, while the exposed regions are removed using aselective etching process that removes the unprotected regions to formthe via openings 15. The etch process may be reactive ion etch (RIE),which can be selective to the contact surface 5.

FIG. 2 depicts forming a nickel (Ni) and platinum (Pt) containing alloy20 with a semiconductor element at a base of the via opening 15. In theembodiments, in which the contact surface 5 is composed of silicon (Si),the semiconductor element that alloys with the nickel (Ni) and platinum(Pt) may be silicon (Si), in which the alloy is a silicide, such asnickel platinum silicide (NiPtSi). In the embodiments, in which thesemiconductor element at the base of the via opening 15 includegermanium (Ge), such as silicon germanium (SiGe), the alloy formed withthe nickel (Ni) and platinum (Pt) can be a metal germanosilicide, e.g.,the alloy may include nickel (Ni), platinum (Pt), germanium (Ge), and insome instances silicon (Si).

In some embodiments, the process for forming the nickel (Ni) andplatinum (Pt) containing alloy 20 with a semiconductor element at a baseof the via opening 15 may include depositing a metal layer includingnickel (Ni) and platinum (Pt) within the via opening 15. The metal layerof nickel (Ni) and platinum (Pt) can be deposited using physical vapordeposition (PVD), chemical vapor deposition (CVD) or atomic layerdeposition (ALD) methods. In one example, in which the metal layer ofnickel (Ni) and platinum (Pt) is deposited by physical vapor deposition(PVD) method, the deposition process can include sputtering. Examples ofsputtering apparatus that can be suitable for depositing the metal layerincluding nickel (Ni) and platinum (Pt) within the via opening 15include DC diode type systems, radio frequency (RF) sputtering,magnetron sputtering, and ionized metal plasma (IMP) sputtering. Inanother example, the metal layer including nickel (Ni) and platinum (Pt)within the via opening 15 using plating processes, such aselectroplating or electroless plating. In the embodiments, in which themetal layer including nickel (Ni) and platinum (Pt) is deposited withinthe via opening 15 using chemical vapor deposition (CVD), the chemicalvapor deposition (CVD) process may be selected from the group consistingof Atmospheric Pressure CVD (APCVD), Low Pressure CVD (LPCVD) and PlasmaEnhanced CVD (PECVD), Metal-Organic CVD (MOCVD) and combinations thereofmay also be employed. It is noted that the aforementioned examples ofdeposition processes are provided for illustrative purposes only, andare not intended to limit the present description, as other depositionprocesses may be equally applicable, so long as enough material may bedeposited within the via opening for the deposited metals to interactwith the semiconductor material of the contact surface during thesubsequently described annealing steps.

Following deposition of the metal layer including nickel (Ni) andplatinum (Pt) within the via opening 15, an anneal process can beapplied to interdiffuse the metal elements from the metal layerincluding nickel (Ni) and platinum (Pt) deposited within the via opening15 with the semiconductor elements of the contact surface 5 of thesemiconductor device at the base of the via opening 15 to form the metalsemiconductor alloy. For example, the annealing process provides anickel (Ni) and platinum (Pt) containing alloy 20 with a semiconductorelement, e.g., silicide (nickel platinum silicide (NiPtSi) and/or metalgerminicide, at a base of the via opening 15. In some embodiments, theannealing process can include furnace annealing, rapid thermal annealing(RTA) and/or pulsed laser annealing. The temperature and time of theanneal process is selected so the deposited metal, e.g., metal layerincluding nickel (Ni) and platinum (Pt), reacts with the semiconductormaterial of the contact surface, e.g., type IV semiconductor (e.g.,silicon (Si), germanium (Ge), and/or silicon germanium (SiGe)) forming ametal semiconductor, e.g., silicide, such as nickel platinum silicide(NiPtSi) or nickel platinum germanosilicide. For example, the annealingtemperature may range from 300° C. to 750° C., and the time period forthe anneal may range from the millisecond range, e.g., 1 millisecond, toon the order of minute, such as 15 minutes, particularly depending uponthe anneal process, e.g. laser annealing vs. furnace annealing.Following formation of the metal semiconductor alloy, the unreactedmetal can be removed by a selective etch.

The aforementioned process conditions can be modified to provide a metalsemiconductor alloy region having a thickness of less than 15 nm, e.g.,10 nm or less. In one example, the thickness of the nickel (Ni) andplatinum (Pt) containing alloy 20 with a semiconductor element, e.g.,silicide (nickel platinum silicide (NiPtSi) and/or metal germinicide, ata base of the via opening 15 ranges from 1 nm to 10 nm. In anotherexample, the thickness of the nickel (Ni) and platinum (Pt) containingalloy 20 with a semiconductor element, e.g., silicide (nickel platinumsilicide (NiPtSi) and/or metal germinicide, at a base of the via opening15 ranges from 2 nm to 5 nm.

FIG. 3 depicts one embodiment of depositing a titanium (Ti) layer 25having an angstrom scale thickness that within the via in contact withthe nickel platinum semiconductor alloy 20, wherein an aluminumcontaining fill 30 is deposited atop the titanium (Ti) layer 25. Thetitanium (Ti) layer 25 can be 95 wt. % titanium (Ti) or greater. In someembodiments, the titanium (Ti) layer 25 can be greater than 99 wt. %titanium (Ti). In yet other embodiments, the titanium (Ti) layer 25 canbe 100 wt. % titanium (Ti). The titanium (Ti) layer 25 is a conformallydeposited layer, in which the titanium (Ti) layer 25 is deposited on thesidewalls and base of the via opening 15. The term “conformal” denotes alayer having a thickness that does not deviate from greater than or lessthan 30% of an average value for the thickness of the layer. Thetitanium (Ti) layer 25 is deposited to an angstrom scale thickness. Insome embodiments, the term “angstrom scale” means 150 Å or less. Forexample, the titanium (Ti) layer 25 can have a thickness of 100 Å orless. In some examples, the titanium (Ti) layer 25 may have a thicknessof 95 Å, 90 Å, 85 Å, 80 Å, 70 Å, 60 Å, 50 Å, 40 Å, 30 Å, 20 Å, 15 Å, 10Å, 5 Å or 1 Å, or may be equal to any range of thickness that includesone of the aforementioned values as an upper limit to the range, and oneof the aforementioned values as a lower limit to the range.

The titanium (Ti) layer 25 can be deposited using a method that canprovide the aforementioned purity of titanium and the aforementionedthicknesses. In one example, the titanium (Ti) layer 25 is depositedusing thermal electron beam deposition, which may also be referred to aselectron beam physical vapor deposition (EBPVD). In some examples,electron beam physical vapor deposition, or EBPVD, is a form of physicalvapor deposition in which a target anode, i.e., a titanium (Ti) anode,is bombarded with an electron beam given off by a charged tungstenfilament under high vacuum. In accordance with the present description,the electron beam of the EBPVD device causes atoms from a titaniumtarget to transform into the gaseous phase. These atoms then precipitateinto solid form, coating everything in the vacuum chamber (within lineof sight) with a thin layer of the anode material, i.e., titanium (Ti).In the present example, the structure depicted in FIG. 3 is placed inthe deposition chamber of the EBPVD process, hence forming the titanium(Ti) layer 25 on the exposed sidewalls of the via opening 15 and on thenickel platinum semiconductor alloy 20 at the base of the via opening15. In some embodiments, the titanium (Ti) layer 25 is formed using anatomic layer deposition (ALD) process.

Still referring to FIG. 3, in some embodiments, following the formationof the titanium (Ti) layer 25, at least a portion of the via opening 15is filled with an aluminum (Al) fill 30. The aluminum (Al) fill 30 canbe 95 wt. % aluminum (Al) or greater. In some embodiments, the aluminum(Al) fill 30 can be greater than 99 wt. % aluminum (Al) or greater. Inyet other embodiments, the aluminum (Al) fill 30 can be 100 wt. %aluminum (Al). The aluminum (Al) fill 30 can be deposited using anymethod suitable for filling the via opening 15. For example, thealuminum (Al) fill 30 can be deposited using physical vapor deposition(PVD), chemical vapor deposition (CVD) or atomic layer deposition (ALD)methods. In one example, in which the aluminum (Al) fill 30 is depositedwithin the via opening by physical vapor deposition (PVD) method, thedeposition process may include sputtering, such as sputtering via DCdiode type systems, radio frequency (RF) sputtering, magnetronsputtering, and ionized metal plasma (IMP) sputtering. In anotherexample, the aluminum (Al) fill 30 is deposited within the via opening15 using plating processes, such as electroplating or electrolessplating. In the embodiments, in which the aluminum (Al) fill 30 isdeposited within the via opening 15 using chemical vapor deposition(CVD), the chemical vapor deposition (CVD) process can be selected fromthe group consisting of Atmospheric Pressure CVD (APCVD), Low PressureCVD (LPCVD) and Plasma Enhanced CVD (PECVD), Metal-Organic CVD (MOCVD)and combinations thereof may also be employed. It is noted that theaforementioned examples of deposition processes are provided forillustrative purposes only, and are not intended to limit the describedmethods and structures. In some embodiments, following deposition of thealuminum (Al) fill 30, the structure can be planarized, e.g., thestructure can be planarized using a chemical mechanical planarization(CMP) process.

FIG. 4 depicts one embodiment of applying an anneal to the materialstack depicted in FIG. 3 to provide a contact alloy 35 a comprisingnickel (Ni), platinum (Pt), aluminum (Al), titanium (Ti) and asemiconductor element from the contact surface 5 of the semiconductordevice. For example, the contact alloy 35 a may be Ni(Pt)—Ti—Al alloywith Si or SiGe. The anneal for forming the contact alloy 35 a can be aforming gas anneal (FGA) to getter oxygen (O) and form the intermetallicalloy that provides the contact alloy 35 a. A forming gas anneal (FGA)is a thermal process including an atmosphere that is a mixture ofhydrogen and nitrogen. It is sometimes called a “dissociated ammoniaatmosphere”. In one embodiment, the forming gas anneal atmosphereincludes a 5% H₂ in N₂. By gettering oxygen, the forming gas anneal(FGA) may reduce the formation of oxides on the contact alloy 35 acomposed of nickel (Ni), platinum (Pt), aluminum (Al), titanium (Ti) anda semiconductor element from the contact surface 5 of the semiconductordevice. The forming gas anneal (FGA) may be conducted in a furnace. Insome embodiments, the forming gas anneal (FGA) can include an elevatedtemperature ranging from 250° C. to 550° C. In some other embodiments,the forming gas anneal (FGA) can include an elevated temperature rangingfrom 300° C. to 500° C. In yet other embodiments, the forming gas anneal(FGA) ca include an elevated temperature ranging from 300° C. to 450°C., e.g., 350° C. to 450° C. The time period of the anneal may rangefrom 1 minutes to 30 minutes. In one embodiment, the time period of theanneal may range from 10 minutes to 20 minutes. In one example, theforming gas anneal may include a time period of 15 minutes, at atemperature ranging from 350° C. to 450° C.

Applying the anneal described above to the structure depicted in FIG. 3typically causes the titanium (Ti) from the titanium (Ti) layer 25, andthe aluminum (Al) from the aluminum (Al) fill 30, to diffuse andintermix with the nickel (Ni) and platinum (Pt) containing alloy 20 toconvert the nickel (Ni) and platinum (Pt) containing alloy 20 into thecontact alloy 35 a comprising nickel (Ni), platinum (Pt), aluminum (Al),titanium (Ti) and a semiconductor element from the contact surface 5 ofthe semiconductor device. In some embodiments, in which the contactsurface 5 is composed of silicon (Si), the contact alloy 35 a iscomposed of nickel (Ni), platinum (Pt), aluminum (Al), titanium (Ti),and silicon (Si). In some embodiments, the contact alloy 35 a can be ofthe phase (Al_(x)Si_(1-x))₇Ni₃. In some embodiments, the contact alloy35 a is composed of nickel (Ni) ranging from 20 at. % to 30 at. %,platinum (Pt) ranging from 0 at. % to 10 at. %, aluminum (Al) rangingfrom 40 at. % to 60 at. %, and silicon (Si) ranging from 5 at. % to 20at. %. In some embodiments, because this phase does not contain titanium(Ti), during the anneal and phase formation, the titanium (Ti) maysegregate to the interfaces above or below alloy 35 a, as well as grainboundaries within layer 35 a. As a result chemical composition analysisof this layer may reveal the presence of Ti. In some embodiments, Ni isdeposited with Pt (typically up to 10%).

In some embodiments, in which the contact surface 5 is composed ofsilicon germanium (SiGe), the contact alloy 35 a is composed of nickel(Ni), platinum (Pt), aluminum (Al), titanium (Ti), silicon (Si) andgermanium (Ge). In some embodiments, the contact alloy 35 a is composedof nickel (Ni) ranging from 20 at. % to 30 at. %, platinum (Pt) rangingfrom 0 at. % to 10 at. %, aluminum (Al) ranging from 40 at. % to 60 at.%, silicon (Si) ranging from 5 at. % to 20 at. % and germanium (Ge)ranging from 0 at. % to 15 at. %.

The contact alloy 35 a can have a thickness of 30 nm or less. In someexamples, the contact alloy 35 a may have a thickness ranging from 5 nmto 15 nm.

In some embodiments, the above described intermetallic contact alloy 35a composed of nickel (Ni), platinum (Pt), aluminum (Al), titanium (Ti)and a semiconductor element from the contact surface 5 of thesemiconductor device can provide a contact, e.g., source/drain contact,having a very low specific contact resistivity, which can be below1×10⁻⁹ ohm/cm².

FIGS. 1, 2, 5 and 6 describe another embodiment of forming a contact inaccordance with the present description. The contact structure depictedin FIGS. 1, 2, 5 and 6 is similar to the contact structure that isformed using the method described above with reference to FIGS. 1-4. Inthe embodiment that is described with reference to FIGS. 1, 2, 5 and 6the contract further includes a metal nitride liner 40 and a metal fill45 (also referred to as metal containing contact 45). Referring to FIG.5, in accordance with one embodiment of the present descriptionbeginning with the structure depicted in FIG. 2, a titanium (Ti) layer25 is first deposited in the via opening 15 including a portion at thebase of the via opening 15 in contact with the nickel platinumsemiconductor alloy 20. The titanium (Ti) layer 25 that is depicted inFIG. 5 is similar to the titanium (Ti) layer 25 depicted in FIG. 3.Therefore, the description of the titanium (Ti) layer 25 provided abovewith reference to FIG. 3 is suitable for describing at least oneembodiment of the titanium (Ti) layer depicted in FIG. 5.

In a following step, the aluminum (Al) fill 30 is deposited in the viaopening 15. The aluminum (Al) fill 30 depicted in FIG. 5 is similar tothe aluminum (Al) fill 30 that is depicted in FIG. 3. Therefore, atleast one embodiment of the aluminum (Al) fill 30 depicted in FIG. 5 hasbeen described above with reference to FIG. 3. Different than theembodiment of the aluminum (Al) fill depicted in FIG. 3 that fills theentirety of the via opening, the aluminum (Al) fill 30 that is depictedin FIG. 5 only fills a lower portion of the via opening 15. The aluminum(Al) fill 30 that is depicted in FIG. 5 can be deposited to the correctheight of the via opening 15, or the aluminum (Al) fill 30 can bedeposited and then recessed to the correct height within the via opening15 using a etch process, such as reactive ion etch (RIE).

Referring to FIG. 5, in one embodiment, a metal nitride layer 40 can bedeposited on the exposed portions of the titanium (Ti) layer 25 that ispresent on the sidewalls of the via opening 15, and is deposited on therecessed portion of the aluminum (Al) fill 30 that is present in thelower portion of the via 15. In some embodiments, the metal nitridelayer 40 is composed of titanium nitride (TiN). In other embodiments,the metal nitride layer 40 is composed of tantalum nitride (TaN),tungsten nitride (WN), aluminum nitride and combinations thereof. Themetal nitride layer 40 is deposited using chemical vapor deposition(CVD) or physical vapor deposition (PVD) methods. In another example,the metal nitride layer 40 may be formed using atomic layer deposition(ALD). Examples of CVD suitable for forming the metal nitride layer 40include plasma enhanced CVD. Examples of PVD suitable for forming themetal nitride layer 40 include plating or sputtering. The thickness ofthe metal nitride layer 40 can range from 1 nm to 10 nm. In someexamples, the thickness of the metal nitride layer 40 may range from 1nm to 5 nm.

Following formation of the metal nitride layer 40, the via openings 15may be filled with a metal containing contact 45 of the interconnectbeing formed in the via openings 15. The metal containing contact 45 istypically composed of an electrically conductive material. For example,the metal containing contact 45 can be composed of tungsten (W). Inother embodiments, the metal containing contact 45 is composed of ametal that is selected from cobalt (Co), ruthenium (Ru), titanium (Ti),aluminum (Al), copper (Cu) and combinations thereof. The electricallyconductive material for the metal containing contact 45 may be depositedusing chemical vapor deposition (CVD) or physical vapor deposition(PVD). Examples of CVD suitable for forming the metal containing contact45 include metal organic chemical vapor deposition (MOCVD), plasmaenhanced chemical vapor deposition (PECVD), and high density plasma(HDPCVD). Examples of PVD suitable for forming the metal containingcontact 45 of the interconnect including plating, electroplating,electroless plating, sputtering and combinations thereof. The uppersurface of the metal containing contact 45 can be planarized to becoplanar with the upper surface of the dielectric layer 10.

FIG. 6 depicts one embodiment of applying an anneal to the materialstack depicted in FIG. 5 to provide a contact alloy 35 b comprisingnickel, platinum, aluminum, titanium and a semiconductor element fromthe contact surface 5 of the semiconductor device. For example, thecontact alloy 35 b can be Ni(Pt)—Ti—Al alloy with Si or SiGe. The annealfor forming the contact alloy 35 b can be a forming gas anneal (FGA) togetter oxygen (O) and form the intermetallic alloy that provides thecontact alloy 35 b. In some embodiments, the forming gas anneal (FGA)may include an elevated temperature ranging from 250° C. to 550° C. Insome other embodiments, the forming gas anneal (FGA) includes anelevated temperature ranging from 300° C. to 500° C. In yet otherembodiments, the forming gas anneal (FGA) includes an elevatedtemperature ranging from 350° C. to 450° C. The time period of theanneal may range from 5 minutes to 30 minutes. In one embodiment, thetime period of the anneal ranges from 10 minutes to 20 minutes. In oneexample, the forming gas anneal can include a time period of 15 minutes,at a temperature ranging from 350° C. to 450° C.

Applying the anneal described above to the structure depicted in FIG. 5typically causes the titanium (Ti) from the titanium (Ti) layer 25, andthe aluminum (Al) from the aluminum (Al) fill 30, to diffuse andintermix with the nickel (Ni) and platinum (Pt) containing alloy 20 toconvert the nickel (Ni) and platinum (Pt) containing alloy 20 into thecontact alloy 35 b comprising nickel (Ni), platinum (Pt), aluminum (Al),titanium (Ti) and a semiconductor element from the contact surface 5 ofthe semiconductor device. In some embodiments, in which the contactsurface 5 is composed of silicon (Si), the contact alloy 35 b may becomposed of nickel (Ni), platinum (Pt), aluminum (Al), titanium (Ti),and silicon (Si). In some embodiments, the contact alloy 35 b can be ofthe phase (Al_(x)Si_(1-x))₇Ni₃. In some embodiments, the contact alloy35 b may be composed of nickel (Ni) ranging from 20 at. % to 30 at. %,platinum (Pt) ranging from 0 at. % to 10 at. %, aluminum (Al) rangingfrom 40 at. % to 60 at. %, and silicon (Si) ranging from 5 at. % to 20at. %. In some embodiments, because this phase does not contain titanium(Ti), during the anneal and phase formation, the titanium (Ti) maysegregate to the interfaces above or below alloy 35 b, as well as grainboundaries within layer 35 b. As a result chemical composition analysisof this layer may reveal the presence of Ti. In some embodiments, Ni maybe deposited with Pt (typically up to 10%).

In some embodiments, in which the contact surface 5 is composed ofsilicon germanium (SiGe), the contact alloy 35 b may be composed ofnickel (Ni), platinum (Pt), aluminum (Al), titanium (Ti), silicon (Si)and germanium (Ge).

In some embodiments, in which the contact surface 5 is composed ofsilicon germanium (SiGe), the contact alloy 35 b may be composed ofnickel (Ni), platinum (Pt), aluminum (Al), titanium (Ti), silicon (Si)and germanium (Ge). In some embodiments, the contact alloy 35 b may becomposed of nickel (Ni) ranging from 20 at. % to 30 at. %, platinum (Pt)ranging from 0 at. % to 10 at. %, aluminum (Al) ranging from 40 at. % to60 at. %, silicon (Si) ranging from 5 at. % to 20 at. % and germanium(Ge) ranging from 0 at. % to 15 at. %.

In some embodiments, the above described intermetallic contact alloy 35b that is depicted in FIG. 6 is composed of nickel (Ni), platinum (Pt),aluminum (Al), titanium (Ti) and a semiconductor element from thecontact surface 5 of the semiconductor device can provide a contact,e.g., source/drain contact, having a very low specific contactresistivity, which can be below 1×10⁻⁹ ohm/cm².

The contact structures, e.g., interconnect structures, that are depictedin FIGS. 1-6 may be employed in any electrical device. For example, theinterconnect structures that are described herein may be present withinelectrical devices that employ semiconductors that are present withinintegrated circuit chips. The integrated circuit chips including theinterconnects described herein may be integrated with other chips,discrete circuit elements, and/or other signal processing devices aspart of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, including computer products or devices havinga display, a keyboard or other input device, and a central processor.

FIG. 7 depicts one embodiment of a field effect transistor (FET) 100 aincluding a contact 200 a to the source/drain regions 70 a, 70 b of thesemiconductor device including a nickel, platinum, aluminum and titaniumincluding intermetallic contact region 35 a that is alloyed with thesource/drain region contact semiconductor surface 5 (also referred to ascontact alloy 35 a comprising nickel (Ni), platinum (Pt), aluminum (Al),titanium (Ti) and a semiconductor element from the contact surface 5 ofthe semiconductor device). A “field effect transistor (FET)” is asemiconductor device in which the output current, i.e., source-draincurrent, is controlled by the voltage applied to the gate. A FET hasthree terminals, i.e., gate structure 50, source region 70 a and drainregion 70 b. As used herein, the term “drain” means a doped region insemiconductor device located at the end of the channel, in whichcarriers are flowing out of the transistor through the drain. As usedherein, the term “channel” is the region underlying the gate structure50 and between the source and drain region 70 a, 70 b of a semiconductordevice that becomes conductive when the semiconductor device is turnedon. As used herein, the term “source” is a doped region in thesemiconductor device, in which majority carriers are flowing into thechannel.

The gate structure 50 is formed on the channel portion of the substrate1 that the FET 100 a is formed on. The gate structure 50 may include agate dielectric 51, and a gate conductor 52. The gate structure 50 maybe formed using gate first or gate last, i.e., replacement gateprocessing. In one embodiment, the gate dielectric 51 may be composed ofsilicon oxide, or a high-k dielectric material, such as hafnium oxide(HfO₂). The gate conductor 52 may be composed of a conductive material,such as a doped semiconductor, e.g., n-type doped polysilicon, or ametal, such as tungsten (W) or an n-type or p-type work function metal,e.g., titanium nitride.

Gate sidewall spacers 53 may be formed on the sidewalls of the gatestructure 50. Following formation of the gate sidewall spacers 50, thesource and drain regions 70 a, 70 b may be formed in the substrate 1.This can include ion implantation of n-type or p-type dopants into thesubstrate 1 and/or epitaxial growth of n-type or p-type semiconductormaterial on the source and drain region portions of the substrate 1.

Following formation of the source and drain regions 70 a, 70 b, thecontacts 200 a to the source and drain regions 70 a, 70 b may be formed.The contacts 200 a are formed in a via opening 15 through a dielectriclayer 10, and include a nickel, platinum, aluminum and titaniumincluding intermetallic contact region 35 a that is alloyed with thesource/drain region contact semiconductor surface 5 (also referred to ascontact alloy 35 a comprising nickel (Ni), platinum (Pt), aluminum (Al),titanium (Ti) and a semiconductor element from the contact surface 5 ofthe semiconductor device). The contacts 200 a depicted in FIG. 7 may beformed using methods described above with reference to FIGS. 1-4.Therefore, the above description of the dielectric layer 10, via opening15 and the contact alloy 35 a that is described with reference to FIGS.1-4 is suitable for the dielectric layer 10, via opening 15 and theintermetallic contact region 35 a that is depicted in FIG. 7. It isnoted that the titanium (Ti) layer 25, and the aluminum (Al) fill thatare depicted in FIG. 7 have been described above in the description ofthe structures depicted in FIGS. 1-4 having the same reference numbers.

FIG. 8 depicts another embodiment of a field effect transistor (FET) 100b that is similar to the field effect transistor (FET) 100 a depicted inFIG. 7. The FET 100 b depicted in FIG. 8 is different from the FETdepicted in FIG. 7, because the FET 100 a depicted in FIG. 7 hascontacts 200 a formed in accordance with the methods described withreference to FIGS. 1-4, and the contact 200 b to the FET 100 b depictedin FIG. 8 has been formed in accordance with the methods described withreference to FIGS. 1-2 and 5-6. Therefore, the features of the FET1 100b depicted in FIG. 8, such as the gate structure 50, source region 70 a,and drain region 70 b have been described in FIG. 7 by the descriptionof the structures having the same reference numbers. The description ofthe elements of the contact 200 b, such as the metal containing contact45, the metal nitride layer 40, the aluminum fill 30, the titanium layer25, and the contact alloy 35 b can be provided by the description of thestructures having the same reference numbers that are depicted in FIGS.1-2 and 5-6.

The structures depicted in FIGS. 7 and 8 are planar semiconductordevices. The present description is not limited to only these types ofsemiconductor devices. For example, the contacts 200 a, 200 b that aredepicted in FIGS. 7 and 8 can be applied to the contact surface 5 of thesource and drain regions 70 a, 70 b of Fin type Field Effect Transistors(FinFETs) 100 c, 100 d, as depicted in FIGS. 9 and 10. A FinFET includesa fin structure 2, which may be present on a supporting substrate 3. Asused herein, a “fin structure” refers to a semiconductor material, whichis employed as the body of a semiconductor device, in which the gatestructure 50 is positioned around the fin structure 2 such that chargeflows down the channel on the two sidewalls of the fin structure 2 andoptionally along the top surface of the fin structure 2. The portions ofthe fin structure 2 adjacent on the opposing sides of the channelportion are the source and drain region portions of the fin structure 2.Source and drain regions 70 a, 70 b may be formed by ion implantation orby employing in situ epitaxial doped semiconductor material that isformed on the source and drain region portions of the fin structure 2.The gate structure 50 is similar to the gate structures 50 described inFIGS. 7 and 8 and includes at least one gate dielectric and a gateconductor 52. A gate sidewall spacer 53 may also be present on thesidewalls of the gate structure 50.

FIG. 9 depicts one embodiment of a fin type field effect transistor(FinFET) 100 c including a contact 200 a with a nickel, platinum,aluminum and titanium including intermetallic contact region 35 a thatis alloyed with the source/drain region contact semiconductor surface ofthe source and drain regions 70 a, 70 b of the FinFET 100 c. Thecontacts 200 a depicted in FIG. 9 may be formed using methods describedabove with reference to FIGS. 1-4. Therefore, the above description ofthe dielectric layer 10, via opening 15 and the contact alloy 35 a thatis described with reference to FIGS. 1-4 is suitable for the dielectriclayer 10, via opening 15 and the intermetallic contact region 35 a thatis depicted in FIG. 9. It is noted that the titanium (Ti) layer 25, andthe aluminum (Al) fill that are depicted in FIG. 9 have been describedabove in the description of the structures depicted in FIGS. 1-4 havingthe same reference numbers.

FIG. 10 depicts one embodiment of a fin field effect transistor (FinFET)100 d including a nickel, platinum, aluminum and titanium includingintermetallic contact region 35 b that is alloyed with the source/drainregion contact semiconductor surface, wherein the contact furtherincludes a metal nitride liner 40 and a metal containing fill 45 (alsoreferred to as metal containing contact 45). The fin type field effecttransistor (FinFET) 100 d depicted in FIG. 10 includes a contact 200 bformed in accordance with method described with reference to FIGS. 1-2and 5-6. The description of the elements of the contact 200 b, such asthe metal containing contact 45, the metal nitride layer 40, thealuminum fill 30, the titanium layer 25, and the contact alloy 35 b canbe provided by the description of the structures having the samereference numbers that are depicted in FIGS. 1-2 and 5-6.

Having described preferred embodiments of a structure and method forforming LOW RESISTANCE CONTACTS INCLUDING INTERMETALLIC ALLOY OF NICKEL,PLATINUM, TITANIUM, ALUMINUM AND TYPE IV SEMICONDUCTOR ELEMENTS, it isnoted that modifications and variations can be made by persons skilledin the art in light of the above teachings. It is therefore to beunderstood that changes may be made in the particular embodimentsdescribed which are within the scope of the invention as outlined by theappended claims. Having thus described aspects of the invention, withthe details and particularity required by the patent laws, what isclaimed and desired protected by Letters Patent is set forth in theappended claims.

1. A method of forming a contact to a semiconductor device comprising:forming a nickel and platinum semiconductor alloy at a base of a viaopening on a contact surface of the semiconductor device; forming atitanium layer having an angstrom scale thickness conformally depositedin the via opening in contact with the nickel platinum semiconductoralloy; depositing an aluminum containing fill atop the titanium layer;and applying an anneal to a material stack including the aluminumcontaining fill, the titanium layer and the nickel and platinumsemiconductor alloy, wherein said applying the anneal provides a contactalloy comprising nickel, platinum, aluminum, titanium and asemiconductor element from the contact surface of the semiconductordevice.
 2. The method of claim 1, wherein the contact surface of thesemiconductor device comprises a source/drain region comprising a typeIV semiconductor selected from the group consisting of silicon, silicongermanium and a combination thereof.
 3. The method of claim 2, whereinnickel and platinum semiconductor alloy is formed by a methodcomprising: depositing a nickel and platinum alloy atop a surface of thesource/drain region comprised of the type IV semiconductor; andannealing the nickel and platinum alloy to interfuse metals from thenickel and platinum alloy with the type IV semiconductor to form saidnickel platinum semiconductor alloy comprising a metal silicide, metalgermanosilicide or a combination thereof.
 4. The method of claim 3,wherein the depositing the nickel and platinum alloy comprises adeposition process selected from the group consisting of sputtering,plating, electroplating, electroless plating, atomic layer deposition(ALD), chemical vapor deposition (CVD) and combinations thereof.
 5. Themethod of claim 2, wherein the titanium layer is deposited using e-beamphysical vapor deposition.
 6. The method of claim 5, wherein thetitanium layer has a thickness of 100 Å or less.
 7. The method of claim1, wherein said annealing comprises a forming gas anneal.
 8. The methodof claim 1, wherein said annealing comprises a temperature ranging from300° C. to 450° C., and a time period ranging from 1 minute to 20minutes.
 9. The method of claim 1, wherein the contact alloy comprisingnickel, platinum, aluminum, titanium and the semiconductor elementcomprises a Ni(Pt)—Ti—Al alloy with Si or SiGe.
 10. A method of forminga contact to a semiconductor device comprising: forming a nickelplatinum semiconductor alloy at a base of a via opening on a contactsurface to the semiconductor device; depositing a titanium layer havingan angstrom scale thickness in contact with the nickel platinumsemiconductor alloy in the via opening; forming an aluminum containingfill on the titanium layer in a lower portion of the via opening;forming a metal nitride layer and metal containing contact tosubstantially fill the via opening and completing a material stackbeginning with the nickel platinum semiconductor alloy; and applying ananneal to the material stack to provide a contact alloy comprisingnickel, platinum, aluminum, titanium and a semiconductor element fromthe contact surface of the semiconductor device.
 11. The method of claim10, wherein the contact alloy is (Al_(x)Si_(1-x))₇Ni₃.
 12. The method ofclaim 10, wherein the titanium layer is deposited using e-beam physicalvapor deposition, wherein the titanium layer has a thickness of 100 Å orless.
 13. The method of claim 10, wherein the metal nitride layer is ametal nitride selected from the group consisting of TiN, TaN, WN, AlTaNand combinations thereof.
 14. The method of claim 10, wherein the metalcontaining contact comprises W, Al, Cu, Ti, Ta or a combination thereof.15. The method of claim 10, wherein the contact alloy comprising nickel,platinum, aluminum, titanium and the semiconductor element comprises aNi(Pt)—Ti—Al alloy with Si or SiGe.
 16. A contact to a semiconductordevice comprising: a contact surface provided by at least one of asource region and a drain region, the contact surface comprising a typeIV semiconductor material; a nickel, platinum, aluminum and titaniumincluding intermetallic contact region alloyed with the type IVsemiconductor material of the contact surface; and a via contact is incontact with the intermetallic contact region, wherein the via contactincludes a conformal titanium layer present on the intermetallic contactand a metal containing fill present on the conformal titanium layer. 17.The contact of claim 16, wherein the intermetallic contact region thatis alloyed with the type IV semiconductor material comprises nickel inan amount ranging from 20 at. % to 30 at. %, platinum in an amountranging from 0 at. % to 10 at. %, aluminum in an amount ranging from 40at. % to 60 at. %, and titanium in an amount ranging from 5 at. % to 20at. %.
 18. The contact of claim 16, wherein the metal containing fillcomprises an aluminum fill within a lower portion of a via openingcontaining the via contact, a metal nitride layer on the aluminum fill,and a tungsten fill on the metal nitride layer.
 19. The contact of claim16, wherein the intermetallic is (Al_(x)Si_(1-x))₇Ni₃.
 20. The contactof claim 16, wherein the semiconductor device is a field effecttransistor (FET).